ESN6512 MOSFET Datasheet & Specifications

N-Channel PDFN5x6-8L Logic-Level ElecSuper
Vds Max
30V
Id Max
120A
Rds(on)
1.15mΩ@10V;1.5mΩ@4.5V
Vgs(th)
1.5V

Quick Reference

The ESN6512 is an N-Channel MOSFET in a PDFN5x6-8L package, manufactured by ElecSuper. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 120A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerElecSuperOriginal Manufacturer
PackagePDFN5x6-8LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)120AMax current handling
Power Dissipation (Pd)48WMax thermal limit
On-Resistance (Rds(on))1.15mΩ@10V;1.5mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))1.5VVoltage required to turn on
Gate Charge (Qg)68nC@10VSwitching energy
Input Capacitance (Ciss)4.05nFInternal gate capacitance
Output Capacitance (Coss)1.71nFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
TPH1R403NL-ES N-Channel PDFN5x6-8L 30V 120A 1.15mΩ@10V
1.5mΩ@4.5V
1.5V
ElecSuper 📄 PDF
GBS032R4PMAR N-Channel PDFN5x6-8L 30V 180A 2.5mΩ@4.5V 1.9V
GOSEMICON 📄 PDF
FH3304GS N-Channel PDFN5x6-8L 40V 130A 1.4mΩ@10V 2V
XIN FEI HONG 📄 PDF
FH3406GS N-Channel PDFN5x6-8L 60V 140A 2.1mΩ@10V 1V
XIN FEI HONG 📄 PDF