ESN6484 MOSFET Datasheet & Specifications
N-Channel
PDFN5x6-8L
Logic-Level
ElecSuper
Vds Max
100V
Id Max
11A
Rds(on)
91mΩ@10V;97mΩ@4.5V
Vgs(th)
1.8V
Quick Reference
The ESN6484 is an N-Channel MOSFET in a PDFN5x6-8L package, manufactured by ElecSuper. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 11A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ElecSuper | Original Manufacturer |
| Package | PDFN5x6-8L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 11A | Max current handling |
| Power Dissipation (Pd) | 25W | Max thermal limit |
| On-Resistance (Rds(on)) | 91mΩ@10V;97mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.8V | Voltage required to turn on |
| Gate Charge (Qg) | 19.2nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 780pF | Internal gate capacitance |
| Output Capacitance (Coss) | 58pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |