ESN4832 MOSFET Datasheet & Specifications

N-Channel PDFN3x3-8L Logic-Level ElecSuper
Vds Max
30V
Id Max
27A
Rds(on)
11.5mΩ@10V
Vgs(th)
1.5V

Quick Reference

The ESN4832 is an N-Channel MOSFET in a PDFN3x3-8L package, manufactured by ElecSuper. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 27A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerElecSuperOriginal Manufacturer
PackagePDFN3x3-8LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)27AMax current handling
Power Dissipation (Pd)20.8WMax thermal limit
On-Resistance (Rds(on))11.5mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))1.5VVoltage required to turn on
Gate Charge (Qg)15nC@4.5VSwitching energy
Input Capacitance (Ciss)750pFInternal gate capacitance
Output Capacitance (Coss)125pFInternal output capacitance
Operating Temp-40℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
TM30N06DF N-Channel PDFN3x3-8L 65V 30A 24mΩ@10V 1.6V
Tritech-MOS 📄 PDF