ESN21307 MOSFET Datasheet & Specifications

P-Channel PDFN5x6-8L Logic-Level ElecSuper
Vds Max
30V
Id Max
45A
Rds(on)
8.5mΩ@10V;12.5mΩ@4.5V
Vgs(th)
1.5V

Quick Reference

The ESN21307 is an P-Channel MOSFET in a PDFN5x6-8L package, manufactured by ElecSuper. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 45A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerElecSuperOriginal Manufacturer
PackagePDFN5x6-8LPhysical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)45AMax current handling
Power Dissipation (Pd)38WMax thermal limit
On-Resistance (Rds(on))8.5mΩ@10V;12.5mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))1.5VVoltage required to turn on
Gate Charge (Qg)36nC@10VSwitching energy
Input Capacitance (Ciss)1.98nFInternal gate capacitance
Output Capacitance (Coss)335pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
TM55P03NF P-Channel PDFN5x6-8L 30V 55A 8.3mΩ@10V
12mΩ@4.5V
1.5V
Tritech-MOS 📄 PDF
FH18P06G P-Channel PDFN5x6-8L 60V 80A 8.5mΩ 1.2V
XIN FEI HONG 📄 PDF