ESGNH10R90 MOSFET Datasheet & Specifications
N-Channel
PDFN-8L(3x3)
Logic-Level
ElecSuper
Vds Max
100V
Id Max
12.8A
Rds(on)
90mΩ@10V;120mΩ@4.5V
Vgs(th)
1.65V
Quick Reference
The ESGNH10R90 is an N-Channel MOSFET in a PDFN-8L(3x3) package, manufactured by ElecSuper. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 12.8A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ElecSuper | Original Manufacturer |
| Package | PDFN-8L(3x3) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 12.8A | Max current handling |
| Power Dissipation (Pd) | 31W | Max thermal limit |
| On-Resistance (Rds(on)) | 90mΩ@10V;120mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.65V | Voltage required to turn on |
| Gate Charge (Qg) | 4.2nC@10V | Switching energy |
| Input Capacitance (Ciss) | 206pF | Internal gate capacitance |
| Output Capacitance (Coss) | 29pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||