EMD22 Datasheet & Equivalents
NPN+PNP
SOT-563
General Purpose
JSCJ
VCEO
300mV
Ic Max
100mA
Pd Max
150mW
hFE Gain
12
Quick Reference
The EMD22 is a NPN+PNP bipolar junction transistor array in a SOT-563 package, manufactured by JSCJ. It supports a breakdown voltage of 300mV and continuous collector current of 100mA per channel.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | JSCJ | Original Manufacturer |
| Package | SOT-563 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Polarity | NPN+PNP | Configuration |
| Collector-Emitter Voltage (VCEO) | 300mV | Max breakdown voltage |
| Collector Current (Ic) | 100mA | Max current handling |
| Power Dissipation (Pd) | 150mW | Max thermal limit |
| DC Current Gain (hFE) | 12 | Base signal amplification ratio |
| Transition Frequency (fT) | 250MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | 6.11kฮฉ | Leakage current when OFF |
| Operating Temp | -55โ~+150โ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||