EM6M1T2R MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
SOT-563(SOT-666)
Logic-Level
ROHM
Vds Max
30V
Id Max
200mA
Rds(on)
-
Vgs(th)
2V
Quick Reference
The EM6M1T2R is a Dual N/P-Channel in a SOT-563(SOT-666) package, manufactured by ROHM. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 200mA. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | ROHM | Original Manufacturer |
| Package | SOT-563(SOT-666) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 200mA | Max current handling |
| Power Dissipation (Pd) | 150mW | Max thermal limit |
| On-Resistance (Rds(on)) | - | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2V | Voltage required to turn on |
| Gate Charge (Qg) | 1.2nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 50pF | Internal gate capacitance |
| Output Capacitance (Coss) | 9pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||