ECH8660-TL-H MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
SOT-28FL
Standard Power
onsemi
Vds Max
30V
Id Max
4.5A
Rds(on)
59mΩ@10V
Vgs(th)
-
Quick Reference
The ECH8660-TL-H is a Dual N/P-Channel in a SOT-28FL package, manufactured by onsemi. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 4.5A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | onsemi | Original Manufacturer |
| Package | SOT-28FL | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 4.5A | Max current handling |
| Power Dissipation (Pd) | 1.5W | Max thermal limit |
| On-Resistance (Rds(on)) | 59mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | - | Voltage required to turn on |
| Gate Charge (Qg) | 4.4nC@10V | Switching energy |
| Input Capacitance (Ciss) | 240pF | Internal gate capacitance |
| Output Capacitance (Coss) | 45pF;105pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||