DXTN3C100PSQ-13 Datasheet & Equivalents
NPN
PowerDI-8
High Power
DIODES
VCEO
100V
Ic Max
3A
Pd Max
2.5W
hFE Gain
150
Quick Reference
The DXTN3C100PSQ-13 is a NPN bipolar junction transistor in a PowerDI-8 package, manufactured by DIODES. It supports a breakdown voltage of 100V and continuous collector current of 3A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | PowerDI-8 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 100V | Max breakdown voltage |
| Collector Current (Ic) | 3A | Max current handling |
| Power Dissipation (Pd) | 2.5W | Max thermal limit |
| DC Current Gain (hFE) | 150 | Base signal amplification ratio |
| Transition Frequency (fT) | 140MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | 330mV | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | 7V | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||