DXT5551P5-13 Transistor Datasheet & Specifications
NPNPowerDI-5General Purpose
VCEO
160V
Ic Max
600mA
Pd Max
2.25W
Gain
80
Quick Reference
The DXT5551P5-13 is a NPN bipolar transistor in a PowerDI-5 package. This datasheet provides complete specifications including 160V breakdown voltage and 600mA continuous collector current. Download the DXT5551P5-13 datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | PowerDI-5 | Physical mounting |
| VCEO | 160V | Breakdown voltage |
| IC Max | 600mA | Collector current |
| Pd Max | 2.25W | Power dissipation |
| Gain | 80 | DC current gain |
| Frequency | - | Transition speed |
| VCEsat | - | Saturation voltage |
| Vebo | 130MHz | Emitter-Base voltage |
| Temp | -55℃~+150℃ | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|