DXT5551P5-13 Datasheet & Equivalents
NPN
PowerDI-5
High Power
DIODES
VCEO
160V
Ic Max
600mA
Pd Max
2.25W
hFE Gain
80
Quick Reference
The DXT5551P5-13 is a NPN bipolar junction transistor in a PowerDI-5 package, manufactured by DIODES. It supports a breakdown voltage of 160V and continuous collector current of 600mA. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | PowerDI-5 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 160V | Max breakdown voltage |
| Collector Current (Ic) | 600mA | Max current handling |
| Power Dissipation (Pd) | 2.25W | Max thermal limit |
| DC Current Gain (hFE) | 80 | Base signal amplification ratio |
| Transition Frequency (fT) | 130MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | - | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||