DXT5551-13-HXY Transistor Datasheet & Specifications

NPN BJT | HXY MOSFET

NPNSOT-89General Purpose
VCEO
-
Ic Max
160V
Pd Max
-
Gain
-

Quick Reference

The DXT5551-13-HXY is a NPN bipolar transistor in a SOT-89 package. This datasheet provides complete specifications including - breakdown voltage and 160V continuous collector current. Download the DXT5551-13-HXY datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerHXY MOSFETOriginal Manufacturer
PackageSOT-89Physical mounting
VCEO-Breakdown voltage
IC Max160VCollector current
Pd Max-Power dissipation
Gain-DC current gain
Frequency500mWTransition speed
VCEsat300Saturation voltage
Vebo100MHzEmitter-Base voltage
Temp600mAOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
BFU590QNPNSOT-89-15V200mA
LBTN180Y3T1GNPNSOT-89-80V1A
2SD1664NPNSOT-89-32V-
2SC4672NPNSOT-8950V2A500mW
2SC2383NPNSOT-89-160V-
2SC5569-TD-ENPNSOT-89-50V7A
PXT3904-HXYNPNSOT-89-50V-
CXT3019TR-HXYNPNSOT-89-80V-
BSR43TA-HXYNPNSOT-89-80V-
2SD882NPNSOT-89-30V3A