DSS4160V-7 Transistor Datasheet & Specifications

NPN BJT | DIODES

NPNSOT-563General Purpose
VCEO
60V
Ic Max
1A
Pd Max
600mW
Gain
200

Quick Reference

The DSS4160V-7 is a NPN bipolar transistor in a SOT-563 package. This datasheet provides complete specifications including 60V breakdown voltage and 1A continuous collector current. Download the DSS4160V-7 datasheet PDF below for detailed pinout diagrams and application circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-563Physical mounting
VCEO60VBreakdown voltage
IC Max1ACollector current
Pd Max600mWPower dissipation
Gain200DC current gain
Frequency150MHzTransition speed
VCEsat-Saturation voltage
Vebo-Emitter-Base voltage
Temp-55โ„ƒ~+150โ„ƒOperating temp

Direct Replacements & Alternatives

PartTypePackageVCEOIcPd
ZXTN26070CV-7NPNSOT-56370V2A1W