DSS4160V-7 Datasheet & Equivalents
NPN
SOT-563
General Purpose
DIODES
VCEO
60V
Ic Max
1A
Pd Max
600mW
hFE Gain
200
Quick Reference
The DSS4160V-7 is a NPN bipolar junction transistor in a SOT-563 package, manufactured by DIODES. It supports a breakdown voltage of 60V and continuous collector current of 1A. It is widely used in switching and amplification circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-563 | Physical mounting |
| Transistor Type | BJT | Bipolar Junction Transistor |
| Category | Single | Configuration |
| Collector-Emitter Voltage (VCEO) | 60V | Max breakdown voltage |
| Collector Current (Ic) | 1A | Max current handling |
| Power Dissipation (Pd) | 600mW | Max thermal limit |
| DC Current Gain (hFE) | 200 | Base signal amplification ratio |
| Transition Frequency (fT) | 150MHz | Max operating frequency |
| Saturation Voltage (VCEsat) | - | Voltage drop when fully ON |
| Emitter-Base Voltage (Vebo) | - | Max emitter-base breakdown |
| Collector Cutoff Current | 100nA | Leakage current when OFF |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent Transistors & Alternatives
| Part | Type | Package | VCEO | IC | hFE | Pd | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| ZXTN26070CV-7 | NPN | SOT-563 | 70V | 2A | 200 | 1W | DIODES 📄 PDF |