DOZ30P03 MOSFET Datasheet & Specifications
P-Channel
DFN3x3-8
Logic-Level
DOINGTER
Vds Max
30V
Id Max
30A
Rds(on)
15mΩ@10V
Vgs(th)
1.9V
Quick Reference
The DOZ30P03 is an P-Channel MOSFET in a DFN3x3-8 package, manufactured by DOINGTER. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 30A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DOINGTER | Original Manufacturer |
| Package | DFN3x3-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 30A | Max current handling |
| Power Dissipation (Pd) | 31W | Max thermal limit |
| On-Resistance (Rds(on)) | 15mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.9V | Voltage required to turn on |
| Gate Charge (Qg) | 26.3nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.229nF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |