DOZ10N10 MOSFET Datasheet & Specifications
N-Channel
DFN3x3-8
Logic-Level
DOINGTER
Vds Max
100V
Id Max
10A
Rds(on)
125mΩ@10V
Vgs(th)
2.5V
Quick Reference
The DOZ10N10 is an N-Channel MOSFET in a DFN3x3-8 package, manufactured by DOINGTER. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 10A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DOINGTER | Original Manufacturer |
| Package | DFN3x3-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 10A | Max current handling |
| Power Dissipation (Pd) | 20W | Max thermal limit |
| On-Resistance (Rds(on)) | 125mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 12nC@10V | Switching energy |
| Input Capacitance (Ciss) | 811pF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |