DON100N10T MOSFET Datasheet & Specifications
N-Channel
DFN5x6-8
High-Current
DOINGTER
Vds Max
100V
Id Max
100A
Rds(on)
4.3mΩ
Vgs(th)
4V
Quick Reference
The DON100N10T is an N-Channel MOSFET in a DFN5x6-8 package, manufactured by DOINGTER. It supports a drain-source breakdown voltage of 100V and a continuous drain current of 100A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DOINGTER | Original Manufacturer |
| Package | DFN5x6-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 100A | Max current handling |
| Power Dissipation (Pd) | - | Max thermal limit |
| On-Resistance (Rds(on)) | 4.3mΩ | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4V | Voltage required to turn on |
| Gate Charge (Qg) | 57nC@10V | Switching energy |
| Input Capacitance (Ciss) | 3.5nF | Internal gate capacitance |
| Output Capacitance (Coss) | 1nF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| DON110N12T | N-Channel | DFN5x6-8 | 120V | 110A | 8mΩ@4.5V | 2.5V | DOINGTER 📄 PDF |