DO2305AA-C MOSFET Datasheet & Specifications
P-Channel
SOT-23-3
Logic-Level
DOINGTER
Vds Max
15V
Id Max
5.8A
Rds(on)
26mΩ@10V
Vgs(th)
1V
Quick Reference
The DO2305AA-C is an P-Channel MOSFET in a SOT-23-3 package, manufactured by DOINGTER. It supports a drain-source breakdown voltage of 15V and a continuous drain current of 5.8A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DOINGTER | Original Manufacturer |
| Package | SOT-23-3 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 15V | Max breakdown voltage |
| Continuous Drain Current (Id) | 5.8A | Max current handling |
| Power Dissipation (Pd) | 1.92W | Max thermal limit |
| On-Resistance (Rds(on)) | 26mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1V | Voltage required to turn on |
| Gate Charge (Qg) | 8.2nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 860pF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |