DN2625DK6-G MOSFET Array Datasheet & Equivalents
N-Channel Array
DFN-8-EP(5x5)
High-Voltage
MICROCHIP
Vds Max
250V
Id Max
1.1A
Rds(on)
3.5Ω@0V
Vgs(th)
-
Quick Reference
The DN2625DK6-G is a N-Channel Array in a DFN-8-EP(5x5) package, manufactured by MICROCHIP. Each channel supports a drain-source breakdown voltage of 250V and a continuous drain current of 1.1A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | MICROCHIP | Original Manufacturer |
| Package | DFN-8-EP(5x5) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 250V | Max breakdown voltage |
| Continuous Drain Current (Id) | 1.1A | Max current handling |
| Power Dissipation (Pd) | - | Max thermal limit |
| On-Resistance (Rds(on)) | 3.5Ω@0V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | - | Voltage required to turn on |
| Gate Charge (Qg) | 7.04nC | Switching energy |
| Input Capacitance (Ciss) | 1nF | Internal gate capacitance |
| Output Capacitance (Coss) | 70pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||