DN2540N8-G MOSFET Datasheet & Specifications
N-Channel
SOT-89
High-Voltage
MICROCHIP
Vds Max
400V
Id Max
170mA
Rds(on)
25Ω@0V
Vgs(th)
-
Quick Reference
The DN2540N8-G is an N-Channel MOSFET in a SOT-89 package, manufactured by MICROCHIP. It supports a drain-source breakdown voltage of 400V and a continuous drain current of 170mA. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | MICROCHIP | Original Manufacturer |
| Package | SOT-89 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 400V | Max breakdown voltage |
| Continuous Drain Current (Id) | 170mA | Max current handling |
| Power Dissipation (Pd) | - | Max thermal limit |
| On-Resistance (Rds(on)) | 25Ω@0V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | - | Voltage required to turn on |
| Gate Charge (Qg) | - | Switching energy |
| Input Capacitance (Ciss) | 300pF | Internal gate capacitance |
| Output Capacitance (Coss) | 30pF | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||