DN2470K4-G MOSFET Datasheet & Specifications

N-Channel TO-252(D-PAK) High-Voltage MICROCHIP
Vds Max
700V
Id Max
170mA
Rds(on)
42Ω@0V
Vgs(th)
-

Quick Reference

The DN2470K4-G is an N-Channel MOSFET in a TO-252(D-PAK) package, manufactured by MICROCHIP. It supports a drain-source breakdown voltage of 700V and a continuous drain current of 170mA. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerMICROCHIPOriginal Manufacturer
PackageTO-252(D-PAK)Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)700VMax breakdown voltage
Continuous Drain Current (Id)170mAMax current handling
Power Dissipation (Pd)2.5WMax thermal limit
On-Resistance (Rds(on))42Ω@0VResistance when turned fully on
Gate Threshold (Vgs(th))-Voltage required to turn on
Gate Charge (Qg)-Switching energy
Input Capacitance (Ciss)540pFInternal gate capacitance
Output Capacitance (Coss)60pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
No exact equivalents found in database.