DMTH4007LPSQ-13 MOSFET Datasheet & Specifications

N-Channel PowerDI5060-8 Logic-Level DIODES
Vds Max
40V
Id Max
85A
Rds(on)
9.8mΩ@4.5V
Vgs(th)
3V

Quick Reference

The DMTH4007LPSQ-13 is an N-Channel MOSFET in a PowerDI5060-8 package, manufactured by DIODES. It supports a drain-source breakdown voltage of 40V and a continuous drain current of 85A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackagePowerDI5060-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)40VMax breakdown voltage
Continuous Drain Current (Id)85AMax current handling
Power Dissipation (Pd)2.7WMax thermal limit
On-Resistance (Rds(on))9.8mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)29.1nC@10VSwitching energy
Input Capacitance (Ciss)1.895nFInternal gate capacitance
Output Capacitance (Coss)485pFInternal output capacitance
Operating Temp-55℃~+175℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
DMT40M9LPS-13 N-Channel PowerDI5060-8 40V 304A 0.9mΩ@10V 3V
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