DMNH6035SPDW-13 MOSFET Array Datasheet & Equivalents
N-Channel Array
PowerDI5060-8
Logic-Level
DIODES
Vds Max
60V
Id Max
33A
Rds(on)
44mΩ@4.5V
Vgs(th)
3V
Quick Reference
The DMNH6035SPDW-13 is a N-Channel Array in a PowerDI5060-8 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 60V and a continuous drain current of 33A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | PowerDI5060-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 33A | Max current handling |
| Power Dissipation (Pd) | 68W | Max thermal limit |
| On-Resistance (Rds(on)) | 44mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3V | Voltage required to turn on |
| Gate Charge (Qg) | 16nC@10V | Switching energy |
| Input Capacitance (Ciss) | 879pF | Internal gate capacitance |
| Output Capacitance (Coss) | 227pF | Internal output capacitance |
| Operating Temp | -55℃~+175℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| DMTH6010LPD-13 | N-Channel Array | PowerDI5060-8 | 60V | 47.6A | 16mΩ@4.5V | 3V | DIODES 📄 PDF |
| DMNH6035SPDWQ-13 | N-Channel Array | PowerDI5060-8 | 60V | 33A | 44mΩ@4.5V | 3V | DIODES 📄 PDF |
| DMT10H017LPD-13 | N-Channel Array | PowerDI5060-8 | 100V | 54.7A | 30.3mΩ@4.5V | 3V | DIODES 📄 PDF |