DMN6069SFG-7 MOSFET Datasheet & Specifications

N-Channel PowerDI3333-8 Logic-Level DIODES
Vds Max
60V
Id Max
18A
Rds(on)
63mΩ@4.5V
Vgs(th)
3V

Quick Reference

The DMN6069SFG-7 is an N-Channel MOSFET in a PowerDI3333-8 package, manufactured by DIODES. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 18A. It is widely used in switching and power applications.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackagePowerDI3333-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategorySingleConfiguration
Drain-Source Voltage (Vds)60VMax breakdown voltage
Continuous Drain Current (Id)18AMax current handling
Power Dissipation (Pd)2.4WMax thermal limit
On-Resistance (Rds(on))63mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)25nC@10VSwitching energy
Input Capacitance (Ciss)1.48nFInternal gate capacitance
Output Capacitance (Coss)80pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
DMT8008LFG-7 N-Channel PowerDI3333-8 80V 48A 10.4mΩ@4.5V 2.5V
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