DMN6068SE-13 MOSFET Datasheet & Specifications
N-Channel
SOT-223
Logic-Level
DIODES
Vds Max
60V
Id Max
5.6A
Rds(on)
68mΩ@10V;100mΩ@4.5V
Vgs(th)
3V
Quick Reference
The DMN6068SE-13 is an N-Channel MOSFET in a SOT-223 package, manufactured by DIODES. It supports a drain-source breakdown voltage of 60V and a continuous drain current of 5.6A. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-223 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 60V | Max breakdown voltage |
| Continuous Drain Current (Id) | 5.6A | Max current handling |
| Power Dissipation (Pd) | 2W | Max thermal limit |
| On-Resistance (Rds(on)) | 68mΩ@10V;100mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3V | Voltage required to turn on |
| Gate Charge (Qg) | 5.55nC@4.5V;10.3nC@10V | Switching energy |
| Input Capacitance (Ciss) | 502pF | Internal gate capacitance |
| Output Capacitance (Coss) | 45.7pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |