DMN52D0UVA-7 MOSFET Array Datasheet & Equivalents

N-Channel Array SOT-563 Logic-Level DIODES
Vds Max
50V
Id Max
480mA
Rds(on)
4Ω@1.8V
Vgs(th)
1V

Quick Reference

The DMN52D0UVA-7 is a N-Channel Array in a SOT-563 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 50V and a continuous drain current of 480mA. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSOT-563Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)50VMax breakdown voltage
Continuous Drain Current (Id)480mAMax current handling
Power Dissipation (Pd)480mWMax thermal limit
On-Resistance (Rds(on))4Ω@1.8VResistance when turned fully on
Gate Threshold (Vgs(th))1VVoltage required to turn on
Gate Charge (Qg)1.5nC@10VSwitching energy
Input Capacitance (Ciss)-Internal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
DMN52D0UVA-13 N-Channel Array SOT-563 50V 480mA 4Ω@1.8V 1V
DIODES 📄 PDF
DMN52D0UV-7 N-Channel Array SOT-563 50V 480mA 4Ω@1.8V 1V
DIODES 📄 PDF
DMN52D0UV-13 N-Channel Array SOT-563 50V 480mA 4Ω@1.8V 1V
DIODES 📄 PDF
DMN62D0UV-13 N-Channel Array SOT-563 60V 490mA 2.5Ω@2.5V 1V
DIODES 📄 PDF