DMN33D8LTQ-13 MOSFET Datasheet & Specifications
N-Channel
SOT-523
Logic-Level
DIODES
Vds Max
30V
Id Max
115mA
Rds(on)
5Ω@4V
Vgs(th)
1.5V
Quick Reference
The DMN33D8LTQ-13 is an N-Channel MOSFET in a SOT-523 package, manufactured by DIODES. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 115mA. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-523 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 115mA | Max current handling |
| Power Dissipation (Pd) | 300mW | Max thermal limit |
| On-Resistance (Rds(on)) | 5Ω@4V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.5V | Voltage required to turn on |
| Gate Charge (Qg) | 1.23nC@10V | Switching energy |
| Input Capacitance (Ciss) | 48pF | Internal gate capacitance |
| Output Capacitance (Coss) | 11pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |