DMN31D5UFZ-7B MOSFET Datasheet & Specifications
N-Channel
X2-DFN0606-3
Logic-Level
DIODES
Vds Max
30V
Id Max
220mA
Rds(on)
4.5Ω@1.5V
Vgs(th)
1V
Quick Reference
The DMN31D5UFZ-7B is an N-Channel MOSFET in a X2-DFN0606-3 package, manufactured by DIODES. It supports a drain-source breakdown voltage of 30V and a continuous drain current of 220mA. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | X2-DFN0606-3 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 220mA | Max current handling |
| Power Dissipation (Pd) | 393mW | Max thermal limit |
| On-Resistance (Rds(on)) | 4.5Ω@1.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1V | Voltage required to turn on |
| Gate Charge (Qg) | 350pC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 22.2pF | Internal gate capacitance |
| Output Capacitance (Coss) | 2.9pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||