DMN3190LDWQ-13 MOSFET Array Datasheet & Equivalents
N-Channel Array
SOT-363
Logic-Level
DIODES
Vds Max
30V
Id Max
1A
Rds(on)
335mΩ@4.5V
Vgs(th)
2.8V
Quick Reference
The DMN3190LDWQ-13 is a N-Channel Array in a SOT-363 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 1A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-363 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 1A | Max current handling |
| Power Dissipation (Pd) | 400mW | Max thermal limit |
| On-Resistance (Rds(on)) | 335mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.8V | Voltage required to turn on |
| Gate Charge (Qg) | 2nC@10V | Switching energy |
| Input Capacitance (Ciss) | - | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| DMN3190LDW-13 | N-Channel Array | SOT-363 | 30V | 1A | 335mΩ@4.5V | 2.8V | DIODES 📄 PDF |
| DMN3190LDWQ-7 | N-Channel Array | SOT-363 | 30V | 1A | 335mΩ@4.5V | 2.8V | DIODES 📄 PDF |