DMN3061SVTQ-13 MOSFET Array Datasheet & Equivalents
N-Channel Array
TSOT-26
Logic-Level
DIODES
Vds Max
30V
Id Max
3.4A
Rds(on)
100mΩ@4.5V
Vgs(th)
1.8V
Quick Reference
The DMN3061SVTQ-13 is a N-Channel Array in a TSOT-26 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 3.4A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | TSOT-26 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 3.4A | Max current handling |
| Power Dissipation (Pd) | 1.08W | Max thermal limit |
| On-Resistance (Rds(on)) | 100mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.8V | Voltage required to turn on |
| Gate Charge (Qg) | 6.6nC@10V | Switching energy |
| Input Capacitance (Ciss) | 278pF | Internal gate capacitance |
| Output Capacitance (Coss) | 44pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| DMN3061SVTQ-7 | N-Channel Array | TSOT-26 | 30V | 3.4A | 100mΩ@4.5V | 1.8V | DIODES 📄 PDF |
| DMN3135LVTQ-7 | N-Channel Array | TSOT-26 | 30V | 3.5A | 100mΩ@4.5V | 2.2V | DIODES 📄 PDF |
| DMN3061SVT-13 | N-Channel Array | TSOT-26 | 30V | 3.4A | 200mΩ@3.3V | 1.8V | DIODES 📄 PDF |