DMN3016LDV-13 MOSFET Array Datasheet & Equivalents
N-Channel Array
PowerDI3333-8
Logic-Level
DIODES
Vds Max
30V
Id Max
21A
Rds(on)
17mΩ@4.5V
Vgs(th)
2V
Quick Reference
The DMN3016LDV-13 is a N-Channel Array in a PowerDI3333-8 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 21A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | PowerDI3333-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 21A | Max current handling |
| Power Dissipation (Pd) | 1.8W | Max thermal limit |
| On-Resistance (Rds(on)) | 17mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2V | Voltage required to turn on |
| Gate Charge (Qg) | 21nC@10V | Switching energy |
| Input Capacitance (Ciss) | - | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| DMT3020LDV-7 | N-Channel Array | PowerDI3333-8 | 30V | 32A | 32mΩ@4.5V | 2.5V | DIODES 📄 PDF |
| DMT47M2LDVQ-13 | N-Channel Array | PowerDI3333-8 | 40V | 30.2A | 15mΩ@4.5V | 2.3V | DIODES 📄 PDF |