DMN2990UFA-7B MOSFET Datasheet & Specifications
N-Channel
XFDFN-3(0.6x0.8)
Logic-Level
DIODES
Vds Max
20V
Id Max
510mA
Rds(on)
2.4Ω@1.5V
Vgs(th)
1V
Quick Reference
The DMN2990UFA-7B is an N-Channel MOSFET in a XFDFN-3(0.6x0.8) package, manufactured by DIODES. It supports a drain-source breakdown voltage of 20V and a continuous drain current of 510mA. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | XFDFN-3(0.6x0.8) | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 510mA | Max current handling |
| Power Dissipation (Pd) | 400mW | Max thermal limit |
| On-Resistance (Rds(on)) | 2.4Ω@1.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1V | Voltage required to turn on |
| Gate Charge (Qg) | - | Switching energy |
| Input Capacitance (Ciss) | 55.2pF | Internal gate capacitance |
| Output Capacitance (Coss) | 8pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||