DMN2053UFDB-13 MOSFET Array Datasheet & Equivalents

N-Channel Array UDFN2020-6 Logic-Level DIODES
Vds Max
20V
Id Max
4.6A
Rds(on)
56mΩ@1.8V
Vgs(th)
1V

Quick Reference

The DMN2053UFDB-13 is a N-Channel Array in a UDFN2020-6 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 4.6A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageUDFN2020-6Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)20VMax breakdown voltage
Continuous Drain Current (Id)4.6AMax current handling
Power Dissipation (Pd)1.14WMax thermal limit
On-Resistance (Rds(on))56mΩ@1.8VResistance when turned fully on
Gate Threshold (Vgs(th))1VVoltage required to turn on
Gate Charge (Qg)-Switching energy
Input Capacitance (Ciss)-Internal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
DMN2053UFDBQ-13 N-Channel Array UDFN2020-6 20V 4.6A 56mΩ@1.8V 1V
DIODES 📄 PDF
DMN2041UFDB-13 N-Channel Array UDFN2020-6 20V 4.7A 65mΩ@2.5V 1.4V
DIODES 📄 PDF
DMN3055LFDBQ-13 N-Channel Array UDFN2020-6 30V 5A 75mΩ@2.5V 1.5V
DIODES 📄 PDF