DMN2016LHAB-7 MOSFET Array Datasheet & Equivalents
N-Channel Array
U-DFN2030-6-EP
Logic-Level
DIODES
Vds Max
20V
Id Max
7.5A
Rds(on)
30mΩ@1.8V
Vgs(th)
1.1V
Quick Reference
The DMN2016LHAB-7 is a N-Channel Array in a U-DFN2030-6-EP package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 7.5A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | U-DFN2030-6-EP | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 7.5A | Max current handling |
| Power Dissipation (Pd) | 1.65W | Max thermal limit |
| On-Resistance (Rds(on)) | 30mΩ@1.8V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.1V | Voltage required to turn on |
| Gate Charge (Qg) | 16nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 1.55nF | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||