DMN2005DLP4K-7 MOSFET Array Datasheet & Equivalents
N-Channel Array
X2-DFN1310-6
Logic-Level
DIODES
Vds Max
20V
Id Max
300mA
Rds(on)
1.7Ω@2.7V
Vgs(th)
900mV
Quick Reference
The DMN2005DLP4K-7 is a N-Channel Array in a X2-DFN1310-6 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 300mA. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | X2-DFN1310-6 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 300mA | Max current handling |
| Power Dissipation (Pd) | 400mW | Max thermal limit |
| On-Resistance (Rds(on)) | 1.7Ω@2.7V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 900mV | Voltage required to turn on |
| Gate Charge (Qg) | - | Switching energy |
| Input Capacitance (Ciss) | - | Internal gate capacitance |
| Output Capacitance (Coss) | - | Internal output capacitance |
| Operating Temp | - | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| DMN2300UFL4-7 | N-Channel Array | X2-DFN1310-6 | 20V | 2.11A | 520mΩ@1.5V | 950mV | DIODES 📄 PDF |