DMN12M8UCA10-7 MOSFET Array Datasheet & Equivalents
N-Channel Array
X4-DSN3015-10
Logic-Level
DIODES
Vds Max
12V
Id Max
25A
Rds(on)
2.4mΩ@3.8V
Vgs(th)
1.4V
Quick Reference
The DMN12M8UCA10-7 is a N-Channel Array in a X4-DSN3015-10 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 12V and a continuous drain current of 25A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | X4-DSN3015-10 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 12V | Max breakdown voltage |
| Continuous Drain Current (Id) | 25A | Max current handling |
| Power Dissipation (Pd) | 2.75W | Max thermal limit |
| On-Resistance (Rds(on)) | 2.4mΩ@3.8V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.4V | Voltage required to turn on |
| Gate Charge (Qg) | 36.4nC@4V | Switching energy |
| Input Capacitance (Ciss) | 2.504nF | Internal gate capacitance |
| Output Capacitance (Coss) | 679pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||