DMN10H6D2LFDB-13 MOSFET Array Datasheet & Equivalents
N-Channel Array
UDFN2020-6
Logic-Level
DIODES
Vds Max
100V
Id Max
270mA
Rds(on)
10Ω@4.5V
Vgs(th)
2V
Quick Reference
The DMN10H6D2LFDB-13 is a N-Channel Array in a UDFN2020-6 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 100V and a continuous drain current of 270mA. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | UDFN2020-6 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 100V | Max breakdown voltage |
| Continuous Drain Current (Id) | 270mA | Max current handling |
| Power Dissipation (Pd) | 1W | Max thermal limit |
| On-Resistance (Rds(on)) | 10Ω@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2V | Voltage required to turn on |
| Gate Charge (Qg) | 1.2nC@10V | Switching energy |
| Input Capacitance (Ciss) | 41pF | Internal gate capacitance |
| Output Capacitance (Coss) | 4.2pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||