DMMT5551-7-F Transistor Datasheet & Specifications
NPNSOT-26General Purpose
VCEO
160V
Ic Max
200mA
Pd Max
300mW
Gain
80
Quick Reference
The DMMT5551-7-F is a NPN bipolar transistor in a SOT-26 package. This datasheet provides complete specifications including 160V breakdown voltage and 200mA continuous collector current. Download the DMMT5551-7-F datasheet PDF below for detailed pinout diagrams and application circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-26 | Physical mounting |
| VCEO | 160V | Breakdown voltage |
| IC Max | 200mA | Collector current |
| Pd Max | 300mW | Power dissipation |
| Gain | 80 | DC current gain |
| Frequency | 300MHz | Transition speed |
| VCEsat | 150mV | Saturation voltage |
| Vebo | 6V | Emitter-Base voltage |
| Temp | -55℃~+150℃ | Operating temp |
Direct Replacements & Alternatives
| Part | Type | Package | VCEO | Ic | Pd |
|---|