DMHT3006LFJ-13 MOSFET Array Datasheet & Equivalents
N-Channel Array
VDFN5045-12
Logic-Level
DIODES
Vds Max
30V
Id Max
13A
Rds(on)
5.8mΩ@10V
Vgs(th)
3V
Quick Reference
The DMHT3006LFJ-13 is a N-Channel Array in a VDFN5045-12 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 13A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | VDFN5045-12 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 13A | Max current handling |
| Power Dissipation (Pd) | 2.1W | Max thermal limit |
| On-Resistance (Rds(on)) | 5.8mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3V | Voltage required to turn on |
| Gate Charge (Qg) | 17nC@10V | Switching energy |
| Input Capacitance (Ciss) | 1.171nF | Internal gate capacitance |
| Output Capacitance (Coss) | 421pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||