DMGD7N45SSD-13 MOSFET Array Datasheet & Equivalents
N-Channel Array
SO-8
High-Voltage
DIODES
Vds Max
450V
Id Max
500mA
Rds(on)
4Ω@10V
Vgs(th)
4.5V
Quick Reference
The DMGD7N45SSD-13 is a N-Channel Array in a SO-8 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 450V and a continuous drain current of 500mA. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SO-8 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 450V | Max breakdown voltage |
| Continuous Drain Current (Id) | 500mA | Max current handling |
| Power Dissipation (Pd) | 1.64W | Max thermal limit |
| On-Resistance (Rds(on)) | 4Ω@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 4.5V | Voltage required to turn on |
| Gate Charge (Qg) | 6.9nC@10V | Switching energy |
| Input Capacitance (Ciss) | 256pF | Internal gate capacitance |
| Output Capacitance (Coss) | 22.5pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||