DMG9933USD-13 MOSFET Array Datasheet & Equivalents

P-Channel Array SO-8 Logic-Level DIODES
Vds Max
20V
Id Max
4.6A
Rds(on)
75mΩ@4.5V;110mΩ@2.5V
Vgs(th)
1.1V

Quick Reference

The DMG9933USD-13 is a P-Channel Array in a SO-8 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 4.6A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSO-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)20VMax breakdown voltage
Continuous Drain Current (Id)4.6AMax current handling
Power Dissipation (Pd)1.15WMax thermal limit
On-Resistance (Rds(on))75mΩ@4.5V;110mΩ@2.5VResistance when turned fully on
Gate Threshold (Vgs(th))1.1VVoltage required to turn on
Gate Charge (Qg)6.5nC@4.5VSwitching energy
Input Capacitance (Ciss)8.4pFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
IRF7324TRPBF P-Channel Array SO-8 20V 9A 26mΩ@2.5V 1V
Infineon 📄 PDF
DMP3048LSD-13 P-Channel Array SO-8 30V 4.8A 80mΩ@2.5V 1.3V
DIODES 📄 PDF
DMP4025LSD-13 P-Channel Array SO-8 40V 7.6A 25mΩ@10V 1.3V
DIODES 📄 PDF
ZXMP6A18DN8TA P-Channel Array SO-8 60V 4.8A 55mΩ@10V 1V
DIODES 📄 PDF