DMG6601LVT-7 MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
TSOT-26
Logic-Level
DIODES
Vds Max
30V
Id Max
3.8A
Rds(on)
142mΩ@4.5V
Vgs(th)
1.5V
Quick Reference
The DMG6601LVT-7 is a Dual N/P-Channel in a TSOT-26 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 3.8A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | TSOT-26 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 30V | Max breakdown voltage |
| Continuous Drain Current (Id) | 3.8A | Max current handling |
| Power Dissipation (Pd) | 1.3W | Max thermal limit |
| On-Resistance (Rds(on)) | 142mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1.5V | Voltage required to turn on |
| Gate Charge (Qg) | 13.8nC@10V | Switching energy |
| Input Capacitance (Ciss) | 541pF | Internal gate capacitance |
| Output Capacitance (Coss) | 46pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||