DMG4822SSD-13 MOSFET Array Datasheet & Equivalents

N-Channel Array SO-8 Logic-Level DIODES
Vds Max
30V
Id Max
10A
Rds(on)
20mΩ@10V
Vgs(th)
3V

Quick Reference

The DMG4822SSD-13 is a N-Channel Array in a SO-8 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 10A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSO-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)10AMax current handling
Power Dissipation (Pd)1.42WMax thermal limit
On-Resistance (Rds(on))20mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)10.5nC@10VSwitching energy
Input Capacitance (Ciss)478.9pFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
STS10DN3LH5 N-Channel Array SO-8 30V 10A 21mΩ@10V 1V
SI4816BDY-T1-GE3 N-Channel Array SO-8 30V 11.4A 22.5mΩ@4.5V 3V
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DMT3020LSD-13 N-Channel Array SO-8 30V 16A 32mΩ@4.5V 2.5V
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DMT3020LSDQ-13 N-Channel Array SO-8 30V 16A 32mΩ@4.5V 2.5V
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SQJ208EP-T1_GE3 N-Channel Array SO-8 40V 60A 11.73mΩ@4.5V 2.4V
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SQJB60EP-T1_BE3 N-Channel Array SO-8 60V 30A 16mΩ@4.5V 2.5V
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DMNH6042SSD-13 N-Channel Array SO-8 60V 16.7A 65mΩ@4.5V 3V
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DMNH6042SSDQ-13 N-Channel Array SO-8 60V 16.7A 65mΩ@4.5V 3V
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