DMG4511SK4-13 MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
TO-252-4L
Logic-Level
DIODES
Vds Max
35V
Id Max
13A;12A
Rds(on)
35mΩ@10V;45mΩ@10V
Vgs(th)
3V
Quick Reference
The DMG4511SK4-13 is a Dual N/P-Channel in a TO-252-4L package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 35V and a continuous drain current of 13A;12A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | TO-252-4L | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 35V | Max breakdown voltage |
| Continuous Drain Current (Id) | 13A;12A | Max current handling |
| Power Dissipation (Pd) | 8.9W | Max thermal limit |
| On-Resistance (Rds(on)) | 35mΩ@10V;45mΩ@10V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 3V | Voltage required to turn on |
| Gate Charge (Qg) | 18.7nC@10V;19.2nC@10V | Switching energy |
| Input Capacitance (Ciss) | 850pF;985.2pF | Internal gate capacitance |
| Output Capacitance (Coss) | 64.7pF;90.6pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||