DMG1013UW-7 MOSFET Datasheet & Specifications
P-Channel
SOT-323
Logic-Level
DIODES
Vds Max
20V
Id Max
820mA
Rds(on)
500mΩ@4.5V
Vgs(th)
1V
Quick Reference
The DMG1013UW-7 is an P-Channel MOSFET in a SOT-323 package, manufactured by DIODES. It supports a drain-source breakdown voltage of 20V and a continuous drain current of 820mA. It is widely used in switching and power applications.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | SOT-323 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Single | Configuration |
| Drain-Source Voltage (Vds) | 20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 820mA | Max current handling |
| Power Dissipation (Pd) | 310mW | Max thermal limit |
| On-Resistance (Rds(on)) | 500mΩ@4.5V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 1V | Voltage required to turn on |
| Gate Charge (Qg) | 622.4pC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 59.76pF | Internal gate capacitance |
| Output Capacitance (Coss) | 12.07pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |