DMC67D8UFDBQ-13 MOSFET Array Datasheet & Equivalents
Dual N/P-Channel
UDFN2020-6
Logic-Level
DIODES
Vds Max
60V;20V
Id Max
2.9A
Rds(on)
4.2Ω@4V
Vgs(th)
2.5V
Quick Reference
The DMC67D8UFDBQ-13 is a Dual N/P-Channel in a UDFN2020-6 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 60V;20V and a continuous drain current of 2.9A. It is ideal for high-density boards and compact switching circuits.
Technical Specifications
| Parameter | Value | Description |
|---|---|---|
| Manufacturer | DIODES | Original Manufacturer |
| Package | UDFN2020-6 | Physical mounting |
| Transistor Type | MOSFET | Metal-Oxide-Semiconductor FET |
| Category | Array | Configuration |
| Drain-Source Voltage (Vds) | 60V;20V | Max breakdown voltage |
| Continuous Drain Current (Id) | 2.9A | Max current handling |
| Power Dissipation (Pd) | 890mW | Max thermal limit |
| On-Resistance (Rds(on)) | 4.2Ω@4V | Resistance when turned fully on |
| Gate Threshold (Vgs(th)) | 2.5V | Voltage required to turn on |
| Gate Charge (Qg) | 7.3nC@4.5V | Switching energy |
| Input Capacitance (Ciss) | 443pF | Internal gate capacitance |
| Output Capacitance (Coss) | 128pF | Internal output capacitance |
| Operating Temp | -55℃~+150℃ | Safe junction temperature range |
Equivalent MOSFETs & Alternatives
| Part | Type | Package | Vds | Id | Rds(on) | Vgs(th) | Manufacturer / Datasheet |
|---|---|---|---|---|---|---|---|
| No exact equivalents found in database. | |||||||