DMC6040SSDQ-13 MOSFET Array Datasheet & Equivalents

Dual N/P-Channel SO-8 Logic-Level DIODES
Vds Max
60V;60V
Id Max
6.5A;3.9A
Rds(on)
40mΩ@10V;10mΩ@10V
Vgs(th)
3V

Quick Reference

The DMC6040SSDQ-13 is a Dual N/P-Channel in a SO-8 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 60V;60V and a continuous drain current of 6.5A;3.9A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageSO-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)60V;60VMax breakdown voltage
Continuous Drain Current (Id)6.5A;3.9AMax current handling
Power Dissipation (Pd)800mWMax thermal limit
On-Resistance (Rds(on))40mΩ@10V;10mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))3VVoltage required to turn on
Gate Charge (Qg)20.8nC@10V;19.4nC@10VSwitching energy
Input Capacitance (Ciss)1.13nF;1.03nFInternal gate capacitance
Output Capacitance (Coss)69pF;49.1pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
DMC6040SSD-13 Dual N/P-Channel SO-8 60V 6.5A;3.9A 40mΩ@10V
110mΩ@10V
3V
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