DMC3016LNS-7 MOSFET Array Datasheet & Equivalents

Dual N/P-Channel PowerDI3333-8 Logic-Level DIODES
Vds Max
30V
Id Max
9A;6.8A
Rds(on)
12mΩ@10V;22mΩ@10V
Vgs(th)
2V;2.4V

Quick Reference

The DMC3016LNS-7 is a Dual N/P-Channel in a PowerDI3333-8 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 30V and a continuous drain current of 9A;6.8A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackagePowerDI3333-8Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)30VMax breakdown voltage
Continuous Drain Current (Id)9A;6.8AMax current handling
Power Dissipation (Pd)1.3WMax thermal limit
On-Resistance (Rds(on))12mΩ@10V;22mΩ@10VResistance when turned fully on
Gate Threshold (Vgs(th))2V;2.4VVoltage required to turn on
Gate Charge (Qg)21nC@10V;10.7nC@10VSwitching energy
Input Capacitance (Ciss)1.184nF;1.188nFInternal gate capacitance
Output Capacitance (Coss)137pF;154pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
DMC3025LDV-13 Dual N/P-Channel PowerDI3333-8 30V 15A 38mΩ@4.5V 2.4V
DIODES 📄 PDF
DMC3016LDV-7 Dual N/P-Channel PowerDI3333-8 30V 21A 38mΩ@4.5V 2.4V
DIODES 📄 PDF
DMC3016LDV-13 Dual N/P-Channel PowerDI3333-8 30V 21A 38mΩ@4.5V 2.4V
DIODES 📄 PDF