DMC25D0UVT-7 MOSFET Array Datasheet & Equivalents

Dual N/P-Channel TSOT-26 Logic-Level DIODES
Vds Max
25V;30V
Id Max
400mA;3.2A;2.6A
Rds(on)
125mΩ@4.5V
Vgs(th)
850mV;900mV

Quick Reference

The DMC25D0UVT-7 is a Dual N/P-Channel in a TSOT-26 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 25V;30V and a continuous drain current of 400mA;3.2A;2.6A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageTSOT-26Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)25V;30VMax breakdown voltage
Continuous Drain Current (Id)400mA;3.2A;2.6AMax current handling
Power Dissipation (Pd)1.2WMax thermal limit
On-Resistance (Rds(on))125mΩ@4.5VResistance when turned fully on
Gate Threshold (Vgs(th))850mV;900mVVoltage required to turn on
Gate Charge (Qg)21nC@10VSwitching energy
Input Capacitance (Ciss)854pFInternal gate capacitance
Output Capacitance (Coss)-Internal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
DMC3730UVT-13 Dual N/P-Channel TSOT-26 25V 680mA 450mΩ@4.5V
1.1Ω@4.5V
1.1V
DIODES 📄 PDF
DMC3730UVT-7 Dual N/P-Channel TSOT-26 25V 680mA - 1.1V
DIODES 📄 PDF