DMC2041UFDB-13 MOSFET Array Datasheet & Equivalents

Dual N/P-Channel UDFN2020-6 Logic-Level DIODES
Vds Max
20V
Id Max
4.7A
Rds(on)
137mΩ@2.5V
Vgs(th)
1.4V

Quick Reference

The DMC2041UFDB-13 is a Dual N/P-Channel in a UDFN2020-6 package, manufactured by DIODES. Each channel supports a drain-source breakdown voltage of 20V and a continuous drain current of 4.7A. It is ideal for high-density boards and compact switching circuits.

Technical Specifications

ParameterValueDescription
ManufacturerDIODESOriginal Manufacturer
PackageUDFN2020-6Physical mounting
Transistor TypeMOSFETMetal-Oxide-Semiconductor FET
CategoryArrayConfiguration
Drain-Source Voltage (Vds)20VMax breakdown voltage
Continuous Drain Current (Id)4.7AMax current handling
Power Dissipation (Pd)2.2WMax thermal limit
On-Resistance (Rds(on))137mΩ@2.5VResistance when turned fully on
Gate Threshold (Vgs(th))1.4VVoltage required to turn on
Gate Charge (Qg)18nC@8VSwitching energy
Input Capacitance (Ciss)881pFInternal gate capacitance
Output Capacitance (Coss)84pFInternal output capacitance
Operating Temp-55℃~+150℃Safe junction temperature range

Equivalent MOSFETs & Alternatives

PartTypePackageVdsIdRds(on)Vgs(th)Manufacturer / Datasheet
DMC2025UFDBQ-7 Dual N/P-Channel UDFN2020-6 20V 6A 25mΩ@4.5V
75mΩ@4.5V
1.4V
DIODES 📄 PDF
DMC2025UFDB-7 Dual N/P-Channel UDFN2020-6 20V 6A 140mΩ@2.5V 1.4V
DIODES 📄 PDF
DMC2025UFDBQ-13 Dual N/P-Channel UDFN2020-6 20V 6A 140mΩ@2.5V 1.4V
DIODES 📄 PDF